Paper Title:
Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
777-780
DOI
10.4028/www.scientific.net/MSF.338-342.777
Citation
J. Österman, A. Hallén, M. Jargelius, U. Zimmermann, A. Galeckas, B. Breitholtz, "Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes", Materials Science Forum, Vols. 338-342, pp. 777-780, 2000
Online since
May 2000
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