Paper Title:
Role of Temperature Gradient in Bulk Crystal Growth of SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
79-82
DOI
10.4028/www.scientific.net/MSF.338-342.79
Citation
C. M. Balkas, A. A. Maltsev, M. D. Roth, N. K. Yushin, "Role of Temperature Gradient in Bulk Crystal Growth of SiC", Materials Science Forum, Vols. 338-342, pp. 79-82, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.