Paper Title:
Dopant-related Complexes in SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
795-798
DOI
10.4028/www.scientific.net/MSF.338-342.795
Citation
A. Gali, J. Miró, P. Deák, R. P. Devaty, W. J. Choyke, "Dopant-related Complexes in SiC", Materials Science Forum, Vols. 338-342, pp. 795-798, 2000
Online since
May 2000
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Price
$32.00
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