Paper Title:
Radiation Defects and Doping of SiC with Phosphorous by Nuclear Transmutation Doping (NTD)
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
853-856
DOI
10.4028/www.scientific.net/MSF.338-342.853
Citation
H. Heissenstein, H. Sadowski, C. Peppermüller, R. Helbig, "Radiation Defects and Doping of SiC with Phosphorous by Nuclear Transmutation Doping (NTD)", Materials Science Forum, Vols. 338-342, pp. 853-856, 2000
Online since
May 2000
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Price
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