Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
857-860 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.857 |
| Citation |
Takeshi Ohshima et al., 2000, Materials Science Forum, 338-342, 857 |
| Authors |
Takeshi Ohshima, Akira Uedono, Hisayoshi Itoh, Masahito Yoshikawa, Kazutoshi Kojima, Sohei Okada, Isamu Nashiyama, L. Bouwhuis, Shoichiro Tanigawa, Thomas Frank, Gerhard Pensl |
| Keywords |
Electron Concentration, Hot-Implantation, Positron Annihilation Spectroscopy, Vacancy Type Defects |
| Full Paper |
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