Paper Title:
Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
857-860
DOI
10.4028/www.scientific.net/MSF.338-342.857
Citation
T. Ohshima, A. Uedono, H. Itoh, M. Yoshikawa, K. Kojima, S. Okada, I. Nashiyama, L. Bouwhuis, S. Tanigawa, T. Frank, G. Pensl, "Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions", Materials Science Forum, Vols. 338-342, pp. 857-860, 2000
Online since
May 2000
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