Paper Title:
Hot-Implantation of Phosphorus Ions into 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
861-864
DOI
10.4028/www.scientific.net/MSF.338-342.861
Citation
S. Imai, S. Kobayashi, T. Shinohe, K. Fukuda, Y. Tanaka, J. Senzaki, H. Tanoue, N. Kobayashi, H. Okushi, "Hot-Implantation of Phosphorus Ions into 4H-SiC", Materials Science Forum, Vols. 338-342, pp. 861-864, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.