Paper Title:
High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
877-880
DOI
10.4028/www.scientific.net/MSF.338-342.877
Citation
D. Panknin, H. Wirth, W. Anwand, G. Brauer, W. Skorupa, "High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing", Materials Science Forum, Vols. 338-342, pp. 877-880, 2000
Online since
May 2000
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Price
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