Paper Title:
High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching
| Periodical | Materials Science Forum (Volumes 338 - 342) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials - 1999 |
| Edited by | Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages | 901-904 |
| DOI | 10.4028/www.scientific.net/MSF.338-342.901 |
| Citation | Stephen E. Saddow et al., 2000, Materials Science Forum, 338-342, 901 |
| Authors | Stephen E. Saddow, John R. Williams, Tamara Isaacs-Smith, Michael A. Capano, James A. Cooper, Michael S. Mazzola, A.J. Hsieh, Jeff B. Casady |
| Keywords | Anneal, Ion Implantation, Silane Overpressure |
| Price | US$ 28,- |
View full size
