Paper Title:
High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
901-904
DOI
10.4028/www.scientific.net/MSF.338-342.901
Citation
S. E. Saddow, J. R. Williams, T. Isaacs-Smith, M. A. Capano, J. A. Cooper, M. S. Mazzola, A.J. Hsieh, J. B. Casady, "High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching", Materials Science Forum, Vols. 338-342, pp. 901-904, 2000
Online since
May 2000
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Price
$32.00
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