Paper Title:
Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
905-908
DOI
10.4028/www.scientific.net/MSF.338-342.905
Citation
M. Satoh, Y. Nakaike, K. Uchimura, K. Kuriyama, "Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC", Materials Science Forum, Vols. 338-342, pp. 905-908, 2000
Online since
May 2000
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Price
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