Electrical and Structural Properties of Al and B Implanted 4H-SiC |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
909-912 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.909 |
| Citation |
Yasunori Tanaka et al., 2000, Materials Science Forum, 338-342, 909 |
| Authors |
Yasunori Tanaka, Naoto Kobayashi, Hajime Okumura, Ryoichi Suzuki, Toshiyuki Ohdaira, Mitsuru Hasegawa, M. Ogura, Sadafumi Yoshida, Hisao Tanoue |
| Keywords |
Aluminium, Boron, DI Center, Divacancy, Hall-Effect Measurement, Ion-Implantation, Photoluminescence (PL), Positron Annihilation Spectroscopy, Vacancy |
| Full Paper |
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