Paper Title:
Improved Annealing Process for 6H-SiC p+-n Junction Creation by Al Implantation
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
921-924
DOI
10.4028/www.scientific.net/MSF.338-342.921
Citation
M. Lazar, L. Ottaviani, M. L. Locatelli, D. Planson, B. Canut, J.-P. Chante, "Improved Annealing Process for 6H-SiC p+-n Junction Creation by Al Implantation", Materials Science Forum, Vols. 338-342, pp. 921-924, 2000
Online since
May 2000
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Price
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