Paper Title:

Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen

Periodical Materials Science Forum (Volumes 338 - 342)
Main Theme Silicon Carbide and Related Materials - 1999
Edited by Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages 933-936
DOI 10.4028/www.scientific.net/MSF.338-342.933
Citation N. Achtziger et al., 2000, Materials Science Forum, 338-342, 933
Authors N. Achtziger, C. Hülsen, Martin S. Janson, Margareta K. Linnarsson, Bengt G. Svensson, W. Witthuhn
Keywords Acceptor, Diffusion, Hydrogen, Implantation, Passivation, Resistivity
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