Paper Title:
Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
933-936
DOI
10.4028/www.scientific.net/MSF.338-342.933
Citation
N. Achtziger, C. Hülsen, M. S. Janson, M. K. Linnarsson, B. G. Svensson, W. Witthuhn, "Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen", Materials Science Forum, Vols. 338-342, pp. 933-936, 2000
Online since
May 2000
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