Paper Title:
Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen
| Periodical |
Materials Science Forum (Volumes 338 - 342)
|
| Main Theme |
Silicon Carbide and Related Materials - 1999
|
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
933-936 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.933 |
| Citation |
N. Achtziger et al., 2000, Materials Science Forum, 338-342, 933 |
| Authors |
N. Achtziger, C. Hülsen, Martin S. Janson, Margareta K. Linnarsson, Bengt G. Svensson, W. Witthuhn |
| Keywords |
Acceptor, Diffusion, Hydrogen, Implantation, Passivation, Resistivity |
| Price |
US$ 28,- |