Paper Title:
Transient-Enhanced Diffusion of Boron in SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
941-944
DOI
10.4028/www.scientific.net/MSF.338-342.941
Citation
M. Laube, G. Pensl, "Transient-Enhanced Diffusion of Boron in SiC", Materials Science Forum, Vols. 338-342, pp. 941-944, 2000
Online since
May 2000
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Price
$32.00
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