Paper Title:
Selective Doping of 6H-SiC by Diffusion of Boron
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
945-948
DOI
10.4028/www.scientific.net/MSF.338-342.945
Citation
S. I. Soloviev, Y. Gao, I.I. Khlebnikov, T. S. Sudarshan, "Selective Doping of 6H-SiC by Diffusion of Boron", Materials Science Forum, Vols. 338-342, pp. 945-948, 2000
Online since
May 2000
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Price
$32.00
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