Paper Title:
Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
949-952
DOI
10.4028/www.scientific.net/MSF.338-342.949
Citation
M. Bockstedte, O. Pankratov, "Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion", Materials Science Forum, Vols. 338-342, pp. 949-952, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.