Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
949-952 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.949 |
| Citation |
M. Bockstedte et al., 2000, Materials Science Forum, 338-342, 949 |
| Authors |
M. Bockstedte, Oleg Pankratov |
| Keywords |
Ab Initio Defect-Energetics, Boron, Defect Complexes, Diffusion, Point Defect |
| Full Paper |
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