Paper Title:
Beryllium Implantation Doping of Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
953-956
DOI
10.4028/www.scientific.net/MSF.338-342.953
Citation
T. Henkel, Y. Tanaka, N. Kobayashi, S. I. Nishizawa, S. Hishita, "Beryllium Implantation Doping of Silicon Carbide", Materials Science Forum, Vols. 338-342, pp. 953-956, 2000
Online since
May 2000
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Price
$32.00
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