Paper Title:
Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
957-960
DOI
10.4028/www.scientific.net/MSF.338-342.957
Citation
W. Jiang, W. J. Weber, "Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide", Materials Science Forum, Vols. 338-342, pp. 957-960, 2000
Online since
May 2000
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Price
$32.00
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