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Microstructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal Annealing

Journal Materials Science Forum (Volumes 338 - 342)
Volume Silicon Carbide and Related Materials - 1999
Edited by Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages 965-968
DOI 10.4028/www.scientific.net/MSF.338-342.965
Citation Werner Puff et al., 2000, Materials Science Forum, 338-342, 965
Authors Werner Puff, Adam G. Balogh, Peter Mascher
Keywords Defect, Irradiation, Positron Annihilation, Semi-insulating (SI)
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