Paper Title:
Ohmic Contact Formation on n-Type 6H-SiC using NiSi2
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
985-988
DOI
10.4028/www.scientific.net/MSF.338-342.985
Citation
T. Nakamura, H. Shimada, M. Satoh, "Ohmic Contact Formation on n-Type 6H-SiC using NiSi2", Materials Science Forum, Vols. 338-342, pp. 985-988, 2000
Online since
May 2000
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Price
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