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Silicon Carbide and Related Materials - 1999

Materials Science Forum Volumes 338 - 342

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• p115 Crystal Growth of 15R-SiC Boules by Sublimation Method   [ 222 K ]
  Authors: Taro Nishiguchi, Sohei Okada, Makato Sasaki, Hiroshi Harima, Shigehiro Nishino
• p119 Growth of 3C SiC Single Crystals from Convection Dominated Melts   [ 168 K ]
  Authors: Jürgen Wollweber, V. Chévrier, D. Siche, Th. Duffar
• p125 An Overview of SiC Growth   [ 373 K ]
  Authors: Hiroyuki Matsunami
• p131 Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments   [ 486 K ]
  Authors: Alexsandre Ellison, Jie Zhang, W. Magnusson, Anne Henry, Qamar-ul Wahab, Peder Bergman, Carl G. Hemmingsson, Nguyen Tien Son, Erik Janzén
• p137 Morphology Control for Growth of Thick Epitaxial 4H SiC Layers   [ 377 K ]
  Authors: Jie Zhang, Alexsandre Ellison, Erik Janzén
• p141 Vertical Hot-Wall Type CVD for SiC Growth   [ 172 K ]
  Authors: Kunimasa Takahashi, Masao Uchida, Makoto Kitabatake, Takeshi Uenoyama
• p145 LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers   [ 365 K ]
  Authors: Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi
• p149 3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor   [ 190 K ]
  Authors: Wei Ji, Peter M. Lofgren, Christer Hallin, Chun-Yuan Gu
• p153 3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction   [ 207 K ]
  Authors: Peter M. Lofgren, Christer Hallin, Chun-Yuan Gu, Wei Ji
• p157 The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor   [ 186 K ]
  Authors: Ebenezer Eshun, Crawford Taylor, N.Fama Diagne, Michael G. Spencer, Alex Gurary, Ian T. Ferguson, Rick Stall
• p161 Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy   [ 323 K ]
  Authors: L.B. Rowland, Greg Dunne, Jaime A. Freitas Jr.
• p165 High Growth Rate Epitaxy of Thick 4H-SiC Layers   [ 287 K ]
  Authors: Mikael Syväjärvi, Rositza Yakimova, Henrik Jacobsson, Margareta K. Linnarsson, Anne Henry, Erik Janzén
• p169 Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor   [ 237 K ]
  Authors: Mitsuhiro Kushibe, Yuuki Ishida, Hajime Okumura, Tetsuo Takahashi, Koh Masahara, Takaya Ohno, Takahito Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai
• p173 Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers   [ 231 K ]
  Authors: H.D. Nordby, Jr., Michael J. O'Loughlin, Mike F. MacMillan, Albert A. Burk, James D. Oliver
• p177 Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane   [ 240 K ]
  Authors: Sung Yong Lee, Kyung Won Lee, Yunsoo Kim