Silicon Carbide and Related Materials - 1999
| Paper Title | Page |
|---|---|
|
Authors: Naoki Oyanagi, Shinichi Nishizawa, Tomohisa Kato, Hirotaka Yamaguchi, Kazuo Arai |
75 |
|
Role of Temperature Gradient in Bulk Crystal Growth of SiC Authors: Cengiz M. Balkas, Andrei A. Maltsev, Matthew D. Roth, Nikolay K. Yushin |
79 |
|
Pressure Effect in Sublimation Growth of Bulk SiC Authors: Yasuo Kitou, Wook Bahng, Shinichi Nishizawa, Shigehiro Nishino, Kazuo Arai |
83 |
|
Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT Authors: D. Schulz, K. Irmscher, J. Dolle, W. Eiserbeck, Timo Müller, H. J. Rost, D. Siche, Günter Wagner, Jürgen Wollweber |
87 |
|
Authors: Alexander Pisch, Ana Maria Ferraria, Christian Chatillon, Elisabeth Blanquet, Michel Pons, Claude Bernard, Mikhail Anikin, Roland Madar |
91 |
|
Considerations on the Crystal Morphology in the Sublimation Growth of SiC Authors: P. Råback, Rositza Yakimova, Mikael Syväjärvi, T. Iakimov, Risto M. Nieminen, Erik Janzén |
95 |
|
Shape of SiC Bulk Single Crystal Grown by Sublimation Authors: Shinichi Nishizawa, Yasuo Kitou, Wook Bahng, Naoki Oyanagi, Muhammad Nasir Khan, Kazuo Arai |
99 |
|
Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid Authors: Wook Bahng, Yasuo Kitou, Shinichi Nishizawa, Hirotaka Yamaguchi, Muhammad Nasir Khan, Naoki Oyanagi, Kazuo Arai, Shigehiro Nishino |
103 |
|
Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes Authors: Boris M. Epelbaum, Dieter Hofmann, M. Müller, Albrecht Winnacker |
107 |
|
Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method Authors: Norbert Schulze, Donovan L. Barrett, Michael Weidner, Gerhard Pensl |
111 |
