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Silicon Carbide and Related Materials 2000

Materials Science Forum Volumes 353 - 356

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• p4 Sponsors and Committees   [ 319 K ]
• p6 Preface   [ 18 K ]
• p8 Overview   [ 12 K ]
• p3 Large Diameter, Low Defect Silicon Carbide Boule Growth   [ 288 K ]
  Authors: Calvin H. Carter Jr., R.C. Glass, M.F. Brady, D.P. Malta, D. Henshall, Stephan G. Müller, Valeri F. Tsvetkov, H. McD. Hobgood, Adrian R. Powell
• p7 SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results   [ 280 K ]
  Authors: Cécile Moulin, Michel Pons, Alexander Pisch, Philippe Grosse, Christian Faure, Alain Basset, Gérard Basset, Antoine Passero, Thierry Billon, Bernard Pelissier, Mikhail Anikin, Etienne Pernot, Petra Pernot-Rejmánková, Roland Madar
• p11 Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process   [ 293 K ]
  Authors: Peter J. Wellmann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker
• p15 Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions   [ 378 K ]
  Authors: Erwin Schmitt, Michael Rasp, Arnd Dietrich Weber, M. Kölbl, Robert Eckstein, L. Kadinski, M. Selder
• p21 Progress in 4H-SiC Bulk Growth   [ 517 K ]
  Authors: Mikhail Anikin, Etienne Pernot, Bernard Pelissier, Michel Pons, Alexander Pisch, Claude Bernard, Thierry Billon, Christian Faure, Cécile Moulin, Roland Madar
• p25 Stability Criteria for 4H-SiC Bulk Growth   [ 297 K ]
  Authors: Thomas L. Straubinger, Matthias Bickermann, Dieter Hofmann, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker
• p29 Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals   [ 431 K ]
  Authors: H. J. Rost, J. Dolle, J. Doerschel, D. Siche, D. Schulz, Jürgen Wollweber
• p33 Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow   [ 277 K ]
  Authors: Thomas L. Straubinger, Peter J. Wellmann, Albrecht Winnacker
• p37 Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals   [ 264 K ]
  Authors: D.S. Karpov, O.V. Bord, S.Yu. Karpov, A.I. Zhmakin, M.S. Ramm, Yuri N. Makarov
• p41 Some Aspects of Sublimation Growth of SiC Ingots   [ 248 K ]
  Authors: S.F. Avramenko, V.S. Kiselev, M. Valakh, V.A. Yukhimchuk
• p45 Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method   [ 238 K ]
  Authors: Norbert Schulze, Jürgen Gajowski, Kurt Semmelroth, Michael Laube, Gerhard Pensl
• p49 Study of Boron Incorporation During PVT Growth of p-type SiC Crystals   [ 260 K ]
  Authors: Matthias Bickermann, Dieter Hofmann, Michael Rasp, Thomas L. Straubinger, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker