Paper Title:
Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
11-14
DOI
10.4028/www.scientific.net/MSF.353-356.11
Citation
P. J. Wellmann, D. Hofmann, L. Kadinski, M. Selder, T. L. Straubinger, A. Winnacker, "Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process", Materials Science Forum, Vols. 353-356, pp. 11-14, 2001
Online since
January 2001
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Price
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