Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process |
| Journal |
Materials Science Forum (Volumes 353 - 356) |
| Volume |
Silicon Carbide and Related Materials 2000 |
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
11-14 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.11 |
| Citation |
Peter J. Wellmann et al., 2001, Materials Science Forum, 353-356, 11 |
| Authors |
Peter J. Wellmann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker |
| Keywords |
Numerical Modeling, Physical Vapor Transport, Silicon Carbide (SiC), Source Material, X-Ray Imaging |
| Full Paper |
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