Paper Title:
Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
123-126
DOI
10.4028/www.scientific.net/MSF.353-356.123
Citation
S. Nishino, Y. Masuda, S. Ohshima, C. Jacob, "Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD", Materials Science Forum, Vols. 353-356, pp. 123-126, 2001
Online since
January 2001
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Price
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