Paper Title:
Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
127-130
DOI
10.4028/www.scientific.net/MSF.353-356.127
Citation
C. Jacob, P. Pirouz, S. Nishino, "Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates", Materials Science Forum, Vols. 353-356, pp. 127-130, 2001
Online since
January 2001
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Price
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