Paper Title:
Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
131-134
DOI
10.4028/www.scientific.net/MSF.353-356.131
Citation
H. Tsuchida, T. Tsuji, I. Kamata, T. Jikimoto, H. Fujisawa, S. Ogino, K. Izumi, "Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate", Materials Science Forum, Vols. 353-356, pp. 131-134, 2001
Online since
January 2001
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Price
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