Paper Title:
Surface Morphology of 4H-SiC Inclined towards <1-100> and <11-20> Grown by APCVD Using the Si2Cl6+C3H8 System
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
139-142
DOI
10.4028/www.scientific.net/MSF.353-356.139
Citation
Y. Masuda, S. Ohshima, C. Jacob, S. Nishino, "Surface Morphology of 4H-SiC Inclined towards <1-100> and <11-20> Grown by APCVD Using the Si2Cl6+C3H8 System", Materials Science Forum, Vols. 353-356, pp. 139-142, 2001
Online since
January 2001
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Price
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