Paper Title:
Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
15-20
DOI
10.4028/www.scientific.net/MSF.353-356.15
Citation
E. Schmitt, M. Rasp, A. D. Weber, M. Kölbl, R. Eckstein, L. Kadinski, M. Selder, "Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions", Materials Science Forum, Vols. 353-356, pp. 15-20, 2001
Online since
January 2001
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Price
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