Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions |
| Journal |
Materials Science Forum (Volumes 353 - 356) |
| Volume |
Silicon Carbide and Related Materials 2000 |
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
15-20 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.15 |
| Citation |
Erwin Schmitt et al., 2001, Materials Science Forum, 353-356, 15 |
| Authors |
Erwin Schmitt, Michael Rasp, Arnd Dietrich Weber, M. Kölbl, Robert Eckstein, L. Kadinski, M. Selder |
| Keywords |
Defect, Numerical Simulation, Supersaturation, Thermal Gradients |
| Full Paper |
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