Paper Title:

How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates

Periodical Materials Science Forum (Volumes 353 - 356)
Main Theme Silicon Carbide and Related Materials 2000
Edited by G. Pensl, D. Stephani and M. Hundhausen
Pages 155-158
DOI 10.4028/www.scientific.net/MSF.353-356.155
Citation Thierry Chassagne et al., 2001, Materials Science Forum, 353-356, 155
Authors Thierry Chassagne, Gabriel Ferro, C. Gourbeyre, M. Le Berre, Daniel Barbier, Yves Monteil
Keywords Chemical Vapor Deposition (CVD), Hetero-Epitaxy, Stress
Price US$ 28,-
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