Paper Title:
Growth of 3C-SiC on Si by Low Temperature CVD
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
159-162
DOI
10.4028/www.scientific.net/MSF.353-356.159
Citation
T. Cloitre, N. Moreaud, P. Vicente, M.L. Sadowski, R.L. Aulombard, "Growth of 3C-SiC on Si by Low Temperature CVD", Materials Science Forum, Vols. 353-356, pp. 159-162, 2001
Online since
January 2001
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Price
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