Paper Title:
A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
171-174
DOI
10.4028/www.scientific.net/MSF.353-356.171
Citation
C.-H. Wu, J. Chung, M. H. Hong, C. A. Zorman, P. Pirouz, M. Mehregany, "A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si", Materials Science Forum, Vols. 353-356, pp. 171-174, 2001
Online since
January 2001
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