Paper Title:
The Influence of Ge on the SiC Nucleation on (111)Si Surfaces
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
183-186
DOI
10.4028/www.scientific.net/MSF.353-356.183
Citation
J. Pezoldt, T. Wöhner, T. Stauden, J.A. Schaefer, G. Vida, "The Influence of Ge on the SiC Nucleation on (111)Si Surfaces", Materials Science Forum, Vols. 353-356, pp. 183-186, 2001
Online since
January 2001
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Price
$32.00
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