Progress in 4H-SiC Bulk Growth |
| Journal |
Materials Science Forum (Volumes 353 - 356) |
| Volume |
Silicon Carbide and Related Materials 2000 |
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
21-24 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.21 |
| Citation |
Mikhail Anikin et al., 2001, Materials Science Forum, 353-356, 21 |
| Authors |
Mikhail Anikin, Etienne Pernot, Bernard Pelissier, Michel Pons, Alexander Pisch, Claude Bernard, Thierry Billon, Christian Faure, Cécile Moulin, Roland Madar |
| Keywords |
4H-SiC Sublimation Growth, Crack, Crystal Shape, Defect |
| Full Paper |
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