Paper Title:
Source Material Related Distribution of Defects in 6H-SiC Single Crystals
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
263-266
DOI
10.4028/www.scientific.net/MSF.353-356.263
Citation
H. J. Rost, D. Siche, J. Dolle, D. Schulz, J. Wollweber, "Source Material Related Distribution of Defects in 6H-SiC Single Crystals", Materials Science Forum, Vols. 353-356, pp. 263-266, 2001
Online since
January 2001
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Price
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