Paper Title:
Characterization of 2 Inch SiC Wafers Made by the Sublimation Method
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
267-270
DOI
10.4028/www.scientific.net/MSF.353-356.267
Citation
M. Sasaki, H. Shiomi, S. Nishino, "Characterization of 2 Inch SiC Wafers Made by the Sublimation Method", Materials Science Forum, Vols. 353-356, pp. 267-270, 2001
Online since
January 2001
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Price
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