Paper Title:
Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
271-274
DOI
10.4028/www.scientific.net/MSF.353-356.271
Citation
E. Szilágyi, N.Q. Khánh, Z. E. Horváth, T. Lohner, G. Battistig, Z. Zolnai, E. Kótai, J. Gyulai , "Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods", Materials Science Forum, Vols. 353-356, pp. 271-274, 2001
Online since
January 2001
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Price
$32.00
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