Paper Title:
Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
| Periodical |
Materials Science Forum (Volumes 353 - 356)
|
| Main Theme |
Silicon Carbide and Related Materials 2000
|
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
295-298 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.295 |
| Citation |
Tomohisa Kato et al., 2001, Materials Science Forum, 353-356, 295 |
| Authors |
Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Shinichi Nishizawa, Kazuo Arai |
| Keywords |
Defect, In Situ Observation, Modified Lely Method, X-Ray Topography |
| Price |
US$ 28,- |