Paper Title:

Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography

Periodical Materials Science Forum (Volumes 353 - 356)
Main Theme Silicon Carbide and Related Materials 2000
Edited by G. Pensl, D. Stephani and M. Hundhausen
Pages 295-298
DOI 10.4028/www.scientific.net/MSF.353-356.295
Citation Tomohisa Kato et al., 2001, Materials Science Forum, 353-356, 295
Authors Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Shinichi Nishizawa, Kazuo Arai
Keywords Defect, In Situ Observation, Modified Lely Method, X-Ray Topography
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