Paper Title:
Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
295-298
DOI
10.4028/www.scientific.net/MSF.353-356.295
Citation
T. Kato, N. Oyanagi, H. Yamaguchi, S. I. Nishizawa, K. Arai, "Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography", Materials Science Forum, Vols. 353-356, pp. 295-298, 2001
Online since
January 2001
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Price
$32.00
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