Paper Title:
Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
299-302
DOI
10.4028/www.scientific.net/MSF.353-356.299
Citation
P. Bergman, H. Lendenmann, P. Å. Nilsson, U. Lindefelt, P. Skytt, "Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes", Materials Science Forum, Vols. 353-356, pp. 299-302, 2001
Online since
January 2001
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