Paper Title:
Modeling of Boron Diffusion in Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
327-330
DOI
10.4028/www.scientific.net/MSF.353-356.327
Citation
H. Bracht, N. Stolwijk, M. Laube, G. Pensl, "Modeling of Boron Diffusion in Silicon Carbide", Materials Science Forum, Vols. 353-356, pp. 327-330, 2001
Online since
January 2001
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Price
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