Paper Title:
Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
331-334
DOI
10.4028/www.scientific.net/MSF.353-356.331
Citation
C. Hülsen, N. Achtziger, J. Herold, W. Witthuhn, "Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiC", Materials Science Forum, Vols. 353-356, pp. 331-334, 2001
Online since
January 2001
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