Paper Title:
Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
341-344
DOI
10.4028/www.scientific.net/MSF.353-356.341
Citation
S. Rohmfeld, M. Hundhausen, L. Ley, N. Schulze, G. Pensl, "Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC", Materials Science Forum, Vols. 353-356, pp. 341-344, 2001
Online since
January 2001
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Price
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