Paper Title:
Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
377-380
DOI
10.4028/www.scientific.net/MSF.353-356.377
Citation
S.G. Sridhara, F.H.C. Carlsson, P. Bergman, A. Henry, E. Janzén, "Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC", Materials Science Forum, Vols. 353-356, pp. 377-380, 2001
Online since
January 2001
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Price
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