Paper Title:
Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy
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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
381-384
DOI
10.4028/www.scientific.net/MSF.353-356.381
Citation
J. W. Steeds, F. Carosella, A.G. Evans, M.M. Ismail, L. R. Danks, W. Voegeli, "Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy", Materials Science Forum, Vols. 353-356, pp. 381-384, 2001
Online since
January 2001
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