Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC |
| Journal |
Materials Science Forum (Volumes 353 - 356) |
| Volume |
Silicon Carbide and Related Materials 2000 |
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
397-400 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.397 |
| Citation |
Roland Weingärtner et al., 2001, Materials Science Forum, 353-356, 397 |
| Authors |
Roland Weingärtner, Matthias Bickermann, Dieter Hofmann, Michael Rasp, Thomas L. Straubinger, Peter J. Wellmann, Albrecht Winnacker |
| Keywords |
Absorption Band, Absorption Mapping, Doping Level Determination, Polytype |
| Full Paper |
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