Paper Title:
Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study
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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
409-412
DOI
10.4028/www.scientific.net/MSF.353-356.409
Citation
A. Fissel, W. Richter, "Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study", Materials Science Forum, Vols. 353-356, pp. 409-412, 2001
Online since
January 2001
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