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Some Aspects of Sublimation Growth of SiC Ingots

Journal Materials Science Forum (Volumes 353 - 356)
Volume Silicon Carbide and Related Materials 2000
Edited by G. Pensl, D. Stephani and M. Hundhausen
Pages 41-44
DOI 10.4028/www.scientific.net/MSF.353-356.41
Citation S.F. Avramenko et al., 2001, Materials Science Forum, 353-356, 41
Authors S.F. Avramenko, V.S. Kiselev, M. Valakh, V.A. Yukhimchuk
Keywords PVT Growth, Residual Stress, Shape of the Crystals
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