Paper Title:
Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs
| Periodical |
Materials Science Forum (Volumes 353 - 356)
|
| Main Theme |
Silicon Carbide and Related Materials 2000
|
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
435-438 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.435 |
| Citation |
E. Rauls et al., 2001, Materials Science Forum, 353-356, 435 |
| Authors |
E. Rauls, Z. Hajnal, Adam Gali, Peter Deák, Thomas Frauenheim |
| Keywords |
Antisite, Formation, Intrinsic Defect, Theory |
| Price |
US$ 28,- |