Paper Title:
Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
439-442
DOI
10.4028/www.scientific.net/MSF.353-356.439
Citation
T. Frank, M. Weidner, H. Itoh, G. Pensl, "Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC", Materials Science Forum, Vols. 353-356, pp. 439-442, 2001
Online since
January 2001
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Price
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