Paper Title:

Implantation Temperature Dependent Deep Level Defects in 4H-SiC

Periodical Materials Science Forum (Volumes 353 - 356)
Main Theme Silicon Carbide and Related Materials 2000
Edited by G. Pensl, D. Stephani and M. Hundhausen
Pages 443-446
DOI 10.4028/www.scientific.net/MSF.353-356.443
Citation Boleslaw Formanek et al., 2001, Materials Science Forum, 353-356, 443
Authors Boleslaw Formanek, L. Storasta, Anders Hallén, Bengt G. Svensson
Keywords Deep Level, DLTS, Implantation, S-Level, Temperature Stable Defects
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