Paper Title:
Implantation Temperature Dependent Deep Level Defects in 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
443-446
DOI
10.4028/www.scientific.net/MSF.353-356.443
Citation
B. Formanek, L. Storasta, A. Hallén, B. G. Svensson, "Implantation Temperature Dependent Deep Level Defects in 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 443-446, 2001
Online since
January 2001
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.