Paper Title:
Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
45-48
DOI
10.4028/www.scientific.net/MSF.353-356.45
Citation
N. Schulze, J. Gajowski, K. Semmelroth, M. Laube, G. Pensl, "Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method", Materials Science Forum, Vols. 353-356, pp. 45-48, 2001
Online since
January 2001
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