Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method |
| Journal |
Materials Science Forum (Volumes 353 - 356) |
| Volume |
Silicon Carbide and Related Materials 2000 |
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
45-48 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.45 |
| Citation |
Norbert Schulze et al., 2001, Materials Science Forum, 353-356, 45 |
| Authors |
Norbert Schulze, Jürgen Gajowski, Kurt Semmelroth, Michael Laube, Gerhard Pensl |
| Keywords |
Acceptor, Aluminium, C-V, Hall Scattering Factor, Hall-Effect, p-Type, SIMS, Sublimation Growth |
| Full Paper |
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